Ion irradiated 6H-SiC: Raman spectroscopy, chemical defects, strains, annealing, and oxidation

Ion irradiated 6H-SiC: Raman spectroscopy, chemical defects, strains, annealing, and oxidation

Ion irradiated 6H-SiC: Raman spectroscopy, chemical defects, strains, annealing, and oxidation 150 150 amit lakhani
UKAEA-CCFE-PR(20)85

Ion irradiated 6H-SiC: Raman spectroscopy, chemical defects, strains, annealing, and oxidation

Raman spectroscopy has been used to identify defective bonding in neon and silicon ion irradiated single crystals of 6H-SiC. Observable differences exist in the CC bonding region corresponding to different defect structures for neon and silicon ion implantations. Evidence of oxidation during high temperature ion implantation is observed as C-O and Si-O Raman signals. Annealing irradiated SiC while acquiring Raman spectra shows rapid recovery of Si-C bonding, however not a complete recovery of the unirradiated structure. Annealing irradiated SiC causes surface oxidation where unirradiated SiC does not oxidise. Raman spectra of ion irradiated SiC show less tensile strain than neutron irradiations, explained by a residual compressive stress caused by the undamaged substrate. Comparisons are made to the apparent radiation resistance of diamond and silicon which have similar crystal structures, but are monatomic, leading to the suggestion that chemical defects are responsible for enhanced radiation damage in SiC.

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