Showing 1 - 2 of 2 UKAEA Paper Results
-
UKAEA-CCFE-PR(20)922020
Raman spectroscopy has been used to identify defective bonding in neon and silicon ion irradiated single crystals of 6H-SiC. Observable differences exist in the CC bonding region corresponding to different defect structures for neon and silicon ion implantations. Evidence of oxidation during high temperature ion implantation is observed as C-O a…
-
UKAEA-CCFE-PR(20)912020
Ion implantation is widely used as a surrogate for neutron irradiation in the investigation of radiation damage on the properties of materials. Due to the small depth of damage, micromechanical methods must be used to extract material properties. In this work, nanoindentation has been applied to ion irradiated silicon carbide to extract radiatio…
Page 1 of 1