Matthew J. Lloyd Jack Haley Bethany Jim Robert Abernethy Mark R. Gilbert Enrique Martinez Osman El-Atwani Duc Nguyen-Manh Michael P. Moody Paul A. J, Bagot David E. J. Armstrong
In this study, we compare the formation of radiation induced defects in W and W-Re-Os alloys, exposed to an equivalent dose of self-ion and neutron irradiation. Transmutation reactions in the neutron irradiated material are simulated in the ion implanted materials by alloying with representative quantities of Re and Os (1.4 and 0.1 at.% respecti…
PublishedAlexander J. Leide Matthew J. Lloyd Richard I. Todd David E. J. Armstrong
Raman spectroscopy has been used to identify defective bonding in neon and silicon ion irradiated single crystals of 6H-SiC. Observable differences exist in the CC bonding region corresponding to different defect structures for neon and silicon ion implantations. Evidence of oxidation during high temperature ion implantation is observed as C-O a…
PreprintAlexander J. Leide Edmund Tarleton Richard I. Todd David E. J. Armstrong
Ion implantation is widely used as a surrogate for neutron irradiation in the investigation of radiation damage on the properties of materials. Due to the small depth of damage, micromechanical methods must be used to extract material properties. In this work, nanoindentation has been applied to ion irradiated silicon carbide to extract radiatio…
PreprintAlexander J. Leide Richard. Todd David E. J. Armstrong
Focussed ion beam (FIB) milling can be used to reveal sub-surface fracture and deformation below indents in materials. However, evolution of residual stresses around the indent impression cause changes to the crack morphology during the FIB cross-sectioning procedure. Berkovich nanoindents in single crystal hexagonal (6H) silicon carbide cause r…
PreprintMatthew J. Lloyd Robert G. Abernethy Mark R. Gilbert Ian Griffiths Paul A. J. Bagot Duc Nguyen-Manh Michael P. Moody David E. J. Armstrong
High temperature, neutron irradiated single crystal tungsten, with a post irradiation composition of W-1.20±0.11at.%Re-0.11±0.05at.%Os-0.03±0.01at.%Ta was characterised using a combination of Atom Probe Tomography (APT) and Scanning Transmission Electron Microscopy (STEM). APT showed that within nanoscale clusters of Re/Os, the atomic density wa…
Preprint Published